- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384374 > H11D3M (FAIRCHILD SEMICONDUCTOR CORP) IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 6; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.5; Package Code: PTSP0008JB-B (TTP-8DV) PDF資料下載
參數(shù)資料
| 型號： | H11D3M |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 6; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.5; Package Code: PTSP0008JB-B (TTP-8DV) |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | PLASTIC, DIP-6 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 226K |
| 代理商： | H11D3M |
H
2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
3
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Characteristic
EMITTER
V
F
Forward Voltage
V
F
T
A
BV
R
Reverse Breakdown
Voltage
C
J
Junction Capacitance
Transfer Characteristics
Symbol
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
(T
A
= 25°C Unless otherwise specified.)
Characteristics
Test Conditions
*All Typical values at T
A
= 25°C
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Test Conditions
Device
Min.
Typ.*
Max.
Unit
(2)
I
F
= 10mA
All
All
1.15
-1.8
1.5
V
Forward Voltage
Temp. Coefficient
mV/°C
I
R
= 10μA
All
6
25
V
V
V
V
F
= 0V, f = 1MHz
= 1V, f = 1MHz
= 6V
All
50
65
0.05
pF
pF
μA
F
I
R
Reverse Leakage
Current
(2)
R
All
10
DETECTOR
BV
CER
Breakdown Voltage
Collector to Emitter
(2)
R
BE
= 1M
, I
C
= 1.0mA, I
F
= 0
MOC8204M
H11D1M/2M
H11D3M
4N38M
MOC8204M
H11D1M/2M
H11D3M
4N38M
4N38M
All
MOC8204M
400
300
200
80
400
300
200
80
7
7
V
BV
BV
CEO
No RBE, I
I
C
= 100μA, I
C
= 1.0mA
= 0
CBO
Collector to Base
(2)
F
V
BV
BV
I
EBO
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
(R
BE
= 1M
I
I
V
V
V
V
V
V
No R
T
A
= 25°C
E
= 100μA, I
= 100μA, I
= 300V, I
= 300V, I
= 200V, I
= 200V, I
= 100V, I
= 100V, I
, V
F
= 0
= 0
= 0, T
= 0, T
= 0, T
= 0, T
= 0, T
= 0, T
= 60V, I
V
V
nA
μA
nA
μA
nA
μA
nA
ECO
E
F
10
CER
(2)
)
CE
F
A
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 0,
100
250
100
250
100
250
50
CE
F
A
CE
F
A
H11D1M/2M
CE
F
A
CE
F
A
H11D3M
CE
F
A
I
CEO
BE
CE
F
4N38M
Device
Min.
Typ.*
Max.
Units
I
R
I
F
I
F
R
I
F
= 20mA, I
C
= 4mA
F
= 10mA, V
= 1M
= 10mA, V
= 10mA, I
= 1M
CE
= 10V,
BE
H11D1M/2M/3M,
MOC8204M
4N38M
H11D1M/2M/3M,
MOC8204M
4N38M
2 (20)
mA (%)
CE
= 0.5mA,
= 10V
2 (20)
V
CE(SAT)
Saturation Voltage
(2)
C
BE
0.1
0.40
V
1.0
SWITCHING TIMES
t
ON
Non-Saturated
Turn-on Time
Turn-off Time
V
CE
= 10V, I
CE
= 2mA,
R
L
= 100
All
5
μs
t
OFF
All
5
μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H11D4 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D4300 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D4300W | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D43S | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D43SD | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H11D3S | 功能描述:晶體管輸出光電耦合器 SO-6 HV PHOTO TRAN RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D3S_Q | 功能描述:晶體管輸出光電耦合器 SO-6 HV PHOTO TRAN RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D3SD | 功能描述:晶體管輸出光電耦合器 Optocoupler SM-DIP6 Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D3SM | 功能描述:晶體管輸出光電耦合器 Hi Volt Phototrans RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D3SR2M | 功能描述:晶體管輸出光電耦合器 Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。