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參數(shù)資料
| 型號： | H11D2M |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 4; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.2; Package Code: PTSP0008JB-B (TTP-8DV) |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | PLASTIC, DIP-6 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 226K |
| 代理商： | H11D2M |
H
2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
Parameter
Device
Value
Units
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ T
All
All
All
All
-55 to +150
-40 to +100
260 for 10 sec
260
3.5
°C
°C
°C
mW
mW/°C
A
= 25°C
Derate Above 25°C
EMITTER
I
F
Forward DC Current
(1)
All
80
mA
V
R
Reverse Input Voltage
(1)
All
6.0
V
I
F
(pk)
Forward Current – Peak (1μs pulse, 300pps)
(1)
All
3.0
A
P
D
LED Power Dissipation @ T
A
= 25°C
(1)
Derate Above 25°C
All
150
1.41
mW
mW/°C
DETECTOR
P
D
Power Dissipation @ T
Derate linearly above 25°C
Collector to Emitter Voltage
A
= 25°C
All
300
4.0
400
300
200
80
400
300
200
80
7
mW
mW/°C
V
V
CER
(1)
MOC8204M
H11D1M, H11D2M
H11D3M
4N38M
MOC8204M
H11D1M, H11D2M
H11D3M
4N38M
H11D1M, H11D2M,
H11D3M,
MOC8204M
All
V
CBO
Collector Base Voltage
(1)
V
V
ECO
Emitter to Collector Voltage
(1)
V
I
C
Collector Current (Continuous)
100
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H11D3M | IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 6; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.5; Package Code: PTSP0008JB-B (TTP-8DV) |
| H11D4 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D4300 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D4300W | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| H11D43S | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H11D2S | 功能描述:晶體管輸出光電耦合器 SO-6 HV PHOTO TRAN RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D2S_Q | 功能描述:晶體管輸出光電耦合器 SO-6 HV PHOTO TRAN RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D2SD | 功能描述:晶體管輸出光電耦合器 Optocoupler SM-DIP6 Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D2SM | 制造商:Fairchild Semiconductor Corporation 功能描述:6-PIN DIP, HV TRANS OUTPUT, SURFACE MOUNT - Bulk |
| H11D2SR2 | 制造商:Motorola Inc 功能描述:11D2SR2 |
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