參數(shù)資料
型號(hào)： GWM160-0055P3
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： Three phase full bridge with Trench MOSFETs in DCB isolated high current package
中文描述： 160 A, 55 V, 0.0029 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 79K
代理商： GWM160-0055P3
2004 IXYS All rights reserved
4
2 - 3
GWM 160-0055P3
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
Component
Symbol
Conditions
Maximum Ratings
I
RMS
per pin in main current paths (P+, N-, L
, L
, L
)
may be additionally limited by external connections
300
A
T
VJ
T
stg
-40...+175
-55...+125
°
C
°
C
V
ISOL
I
ISOL
≤
1 mA; 50/60 Hz; t = 1 min
1000
V~
F
C
Mounting force with clip
50 - 250
N
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
pin to chip
0.6
m
C
P
coupling capacity between shorted
pins and mounting tab in the case
160
pF
Weight
typ.
25
g
Equivalent Circuits for Simulation
Thermal Response
junction - case (typ.)
C
th1
= 0.039 J/K; R
th1
= 0.28 K/W
C
th2
= 0.069 J/K; R
th2
= 0.57 K/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GWM160-0055P3-SMD 制造商:IXYS Corporation 功能描述:GWM160 Series 55 Vds 2 Mohm 1.2 kW 160 A 3 Phase Full Bridge w/ Trench MOSFET
GWM160-0055X1 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:Three phase full Bridge with Trench MOSFETs in DCB isolated high current package
GWM160-0055X1-SL 功能描述:MOSFET 160 Amps 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
GWM160-0055X1-SL SAM 功能描述:分立半導(dǎo)體模塊 160 Amps 55V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類(lèi)型:Phase Controls 安裝風(fēng)格:Screw 封裝 / 箱體:DT61 封裝:
GWM160-0055X1-SLSAM 功能描述:MOSFET 3 Phase Full Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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