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參數資料
| 型號： | GW30NC60W |
| 廠商： | 意法半導體 |
| 英文描述： | N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT |
| 中文描述： | N溝道30A條- 600V的-到247 -到220超高速IGBT的開關PowerMESH商標 |
| 文件頁數： | 5/14頁 |
| 文件大?。?/td> | 294K |
| 代理商： | GW30NC60W |
STGW30NC60W - STGP30NC60W
Electrical characteristics
5/14
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Te
st Condi
tions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
T
J
= 25°C
(see Figure 15)
29.5
12
1640
ns
ns
A/μs
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
T
J
= 125°C
(see Figure 15)
29
13.5
1600
ns
ns
A/μs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
cc
= 390V, I
C
= 20A,
R
GE
= 10
, V
GE
= 15V
T
J
=25°C
(see Figure 17)
19.5
118
27
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
cc
= 390V, I
C
= 20A,
R
GE
=10
, V
GE
=15V,
T
J
=125°C
(see Figure 17)
46
151
38
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
E
on(1)
E
off(2)
E
ts
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
Tj= 25°C
(see Figure 17)
116
181
297
μJ
μJ
μJ
E
on(1)
E
off(2)
E
ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
Tj= 125°C
(see Figure 17)
239
355
594
μJ
μJ
μJ
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