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參數(shù)資料
| 型號： | GW30NC60W |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT |
| 中文描述： | N溝道30A條- 600V的-到247 -到220超高速IGBT的開關(guān)PowerMESH商標(biāo) |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 294K |
| 代理商： | GW30NC60W |
Electrical characteristics
STGW30NC60W - STGP30NC60W
4/14
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-emitter
breakdown voltage
I
C
= 1mA, V
GE
= 0
600
V
V
CE(SAT)
Collector-emitter saturation
voltage
V
GE
=15V, I
C
= 20A, Tj= 25°C
V
GE
=15V, I
C
= 20A,Tj= 125°C
2.1
1.8
2.5
V
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250μA
3.75
5.75
V
I
CES
Collector-emitter leakage
current (V
CE
= 0)
V
CE
= Max rating,Tc=25°C
V
CE
= Max rating, Tc=125°C
10
1
μA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ±20V , V
CE
= 0
± 100
nA
g
fs
Forward transconductance
V
CE
= 15V
,
I
C
= 20A
15
S
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25V, f = 1MHz, V
GE
=0
2080
175
52
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390V, I
C
= 20A,
V
GE
= 15V,
(see Figure 16)
102
17.5
47
140
nC
nC
nC
I
CL
Turn-Off SOA minimum
current
V
clamp
= 480V
,
Tj = 150°C
R
G
= 10
,
V
GE
= 15V
200
A
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