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參數(shù)資料
| 型號： | GW30NC120HD |
| 廠商： | 意法半導體 |
| 英文描述： | N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT |
| 中文描述： | N溝道1200伏- 30A條-對247非?？焖貾owerMESH商標IGBT的 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 280K |
| 代理商： | GW30NC120HD |
STGW30NC120HD
Electrical characteristics
5/13
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
Tj=25°C
(see Figure 16)
29
11
1820
ns
ns
A/μs
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
Tj= 125°C
(see Figure 16)
27
14
1580
ns
ns
A/μs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
Tj= 25°C
(see Figure 16)
90
275
312
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
Tj= 125°C
(see Figure 16)
150
336
592
ns
ns
ns
Table 6.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
E
off (2)
E
ts
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
Tj= 25°C
(see Figure 16)
1660
4438
6098
μJ
μJ
μJ
Eon
(1)
E
off (2)
E
ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V,
Tj= 125°C
(see Figure 16)
3015
6900
9915
μJ
μJ
μJ
Table 7.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
f
Forward on-voltage
If = 20A, Tj = 25°C
If = 20A, Tj = 125°C
1.9
1.7
2.5
V
V
t
rr
Q
rr
I
rrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 20A, V
R
= 27V,
T
j
= 125°C, di/dt = 100A/μs
(see Figure 19)
152
722
9
ns
nC
A
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