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參數(shù)資料
| 型號： | GW30NC120HD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT |
| 中文描述： | N溝道1200伏- 30A條-對247非?？焖貾owerMESH商標(biāo)IGBT的 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 280K |
| 代理商： | GW30NC120HD |
Electrical characteristics
STGW30NC120HD
4/13
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-emitter
breakdown voltage
I
C
= 1mA, V
GE
= 0
1200
V
V
CE(SAT)
Collector-emitter saturation
voltage
V
GE
= 15V, I
C
= 20A, Tj= 25°C
V
GE
= 15V, I
C
= 20A, Tj=125°C
2.2
2.0
2.75
V
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250μA
3.75
5.75
V
I
CES
Collector-emitter leakage
current (V
CE
= 0)
V
GE
=Max rating,Tc=25°C
V
GE
=Max rating, Tc=125°C
500
10
μA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
=± 20V , V
CE
= 0
± 100
nA
g
fs
Forward transconductance
V
CE
= 25V
,
I
C
= 20A
14
S
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25V, f = 1 MHz, V
GE
=0
2510
175
30
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 960V,
I
C
= 20A,V
GE
=15V
110
16
49
120
nC
nC
nC
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