參數(shù)資料
型號: GS882V36BD-333I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 4.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 12/36頁
文件大?。?/td> 732K
代理商: GS882V36BD-333I
GS882V18/36BB/D-333/300/250/200
Rev: 1.02 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/36
2004, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS882V36BGB-200 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V36BGB-200I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V36BGB-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V36BGB-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V36BGB-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS882V36BGB-200 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 6.5NS/3NS 119FBGA - Trays
GS882V36BGB-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 6.5NS/3NS 119FBGA - Trays
GS882V36BGD-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 7.5NS/3.8NS 165FBGA - Trays
GS882V37BB-133I 制造商:GSI Technology 功能描述:256KX36(9 MEG)SYNCH BURST,"+1 SERIES" SCD, JTAG, FLEXDRIVE - Trays
GS882V37BB-300 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 2.2NS 119FBGA - Trays