參數(shù)資料
型號(hào)： GS882V18BB-333I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述： 512K X 18 CACHE SRAM, 4.5 ns, PBGA119
封裝： FBGA-119
文件頁(yè)數(shù)： 18/36頁(yè)
文件大小： 732K
代理商： GS882V18BB-333I
GS882V18/36BB/D-333/300/250/200
Rev: 1.02 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
18/36
2004, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.0
—
3.3
—
4.0
—
5.0
—
ns
Clock to Output Valid
tKQ
—
2.5
—
2.5
—
2.5
—
3.0
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ
1
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
tS
1.0
—
1.0
—
1.2
—
1.4
—
ns
Hold time
tH
0.1
—
0.1
—
0.2
—
0.4
—
ns
Flow
Through
Clock Cycle Time
tKC
4.5
—
5.0
—
5.5
—
6.5
—
ns
Clock to Output Valid
tKQ
—
4.5
—
5.0
—
5.5
—
6.5
ns
Clock to Output Invalid
tKQX
2.0
—
2.0
—
2.0
—
2.0
—
ns
Clock to Output in Low-Z
tLZ
1
2.0
—
2.0
—
2.0
—
2.0
—
ns
Setup time
tS
1.3
—
1.4
—
1.5
—
1.5
—
ns
Hold time
tH
0.3
—
0.4
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.0
—
1.0
—
1.3
—
1.3
—
ns
Clock LOW Time
tKL
1.2
—
1.2
—
1.5
—
1.5
—
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
2.5
1.5
2.5
1.5
3.0
ns
G to Output Valid
tOE
—
2.5
—
2.5
—
2.5
—
3.0
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
—
2.5
—
2.5
—
2.5
—
3.0
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
ns
相關(guān)PDF資料
PDF描述
GS882V18BD-200 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-200I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS882V18BD-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 7.5NS/3.8NS 165FBGA - Trays
GS882V18BD-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 165FBGA - Trays
GS882V18BD-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5.5NS/2.5NS 165FBGA - Trays
GS882V18BD-250I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5.5NS/2.5NS 165FBGA - Trays
GS882V18BGB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 119FBGA - Trays
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