參數(shù)資料
型號(hào): GS882V18BB-333I
廠(chǎng)商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 4.5 ns, PBGA119
封裝: FBGA-119
文件頁(yè)數(shù): 12/36頁(yè)
文件大?。?/td> 732K
代理商: GS882V18BB-333I
GS882V18/36BB/D-333/300/250/200
Rev: 1.02 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/36
2004, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS882V18BD-200 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-200I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V18BD-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS882V18BD-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 7.5NS/3.8NS 165FBGA - Trays
GS882V18BD-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 165FBGA - Trays
GS882V18BD-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5.5NS/2.5NS 165FBGA - Trays
GS882V18BD-250I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5.5NS/2.5NS 165FBGA - Trays
GS882V18BGB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 119FBGA - Trays