參數(shù)資料
型號(hào)： GS88236AB-200I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述： 256K X 36 CACHE SRAM, 6.5 ns, PBGA119
封裝： PLASTIC, BGA-119
文件頁(yè)數(shù)： 27/38頁(yè)
文件大?。?/td> 744K
代理商： GS88236AB-200I
GS88218/36AB/D-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 11/2004
27/38
2001, GSI Technology
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
JTAG Tap Controller State Diagram
Instruction Descriptions
BYPASS
When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili-
tate testing of other devices in the scan path.
Select DR
Capture DR
0
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
1
Select IR
Capture IR
0
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
1
Test Logic Reset
Run Test Idle
0
1
0
1
1
0
1
1
1
0
0
1
1
0
0
0
0
1
1
0
0
0
0
0
1
1
1
1
相關(guān)PDF資料
PDF描述
GS88236AB-225 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AB-225I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AB-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AB-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AD-133 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88236CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-200I 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) SYNCH BURST , SCD, JTAG, FLEXDRIVE - Trays
GS88236CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 5.5NS/2.5NS 119FPBGA - Trays
GS88236CD-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 165FPBGA - Trays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*