參數(shù)資料
型號(hào)： GS881E32BGD-250I
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述： 256K X 32 CACHE SRAM, 5.5 ns, PBGA165
封裝： 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù)： 9/39頁(yè)
文件大?。?/td> 815K
代理商： GS881E32BGD-250I
GS881E18B(T/D)/GS881E32B(T/D)/GS881E36B(T/D)
Rev: 1.04a 3/2009
17/39
2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V
1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
C
2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
C
2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
相關(guān)PDF資料
PDF描述
GS881E32BGD-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36BGD-200 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36BGD-200I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36BGD-250 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36BGD-250I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E32BGD-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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