參數(shù)資料
型號: GS881E32BGD-250I
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 32 CACHE SRAM, 5.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù): 27/39頁
文件大?。?/td> 815K
代理商: GS881E32BGD-250I
GS881E18B(T/D)/GS881E32B(T/D)/GS881E36B(T/D)
Rev: 1.04a 3/2009
33/39
2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
TQFP Package Drawing (Package T)
D1
D
E1
E
Pin
1
b
e
c
L
L1
A2
A1
Y
Notes:
1. All dimensions are in millimeters (mm).
2. Package width and length do not include mold protrusion.
Symbol
Description
Min. Nom. Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
Lead Angle
0
7
相關(guān)PDF資料
PDF描述
GS881E32BGD-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36BGD-200 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36BGD-200I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36BGD-250 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36BGD-250I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E32BGD-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32BGD-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs