參數(shù)資料
型號： GS88136
廠商： GSI TECHNOLOGY
英文描述： 8Mb（256K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）)
中文描述： 8MB的（256 × 36Bit）ByteSafe同步突發(fā)靜態(tài)存儲器（800萬位（256K × 36位）ByteSafe同步靜態(tài)隨機存儲器（帶2位脈沖地址計數(shù)器））
文件頁數(shù)： 12/33頁
文件大?。?/td> 463K
代理商： GS88136
Rev: 1.11 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
12/33
2000, Giga Semconductor, Inc.
Preliminary
GS88118/36T-11/11.5/100/80/66
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute MaximumRatings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute MaximumRatings, for an extended period of time, may affect reliability of
this component.
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V
≤
V
DDQ
≤
2.375 V
(i.e., 2.5 V I/O) and 3.6 V
≤
V
DDQ
≤
3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case.
This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
3.
4.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–0.5 to 4.6
V
–0.5 to V
DD
V
Voltage on Clock Input Pin
–0.5 to 6
V
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/–20
mA
Output Current on Any I/O Pin
+/–20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–55 to 125
o
C
T
BIAS
Temperature Under Bias
–55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Mn.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
3.135
3.3
3.6
V
I/O Supply Voltage
V
DDQ
2.375
2.5
V
DD
V
1
Input High Voltage
V
IH
1.7
—
V
DD
+0.3
V
2
Input Low Voltage
V
IL
–0.3
—
0.8
V
2
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
3
Ambient Temperature (Industrial Range Versions)
T
A
–40
25
85
°
C
3
相關PDF資料
PDF描述
GS88118 8Mb（512K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）)
GS881E18T 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36T-100I 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36T-11 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36T-11.5 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS88136AD-133 制造商:GSI Technology 功能描述:256K X 36 CACHE SRAM, 8.5 ns, PBGA165
GS88136AD-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS88136AD-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS88136AD-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS88136AD-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
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