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參數(shù)資料
| 型號： | GS880Z36AT-225 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 9MB的流水線和流量，通過同步唑的SRAM |
| 文件頁數(shù)： | 14/25頁 |
| 文件大小： | 753K |
| 代理商： | GS880Z36AT-225 |
Rev: 1.02 9/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/25
2001, Giga Semiconductor, Inc.
GS880Z18/36AT-250/225/200/166/150/133
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS880Z36AT-225I | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z36AT-250 | Coaxial Cable; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| GS880Z36AT-250I | Coaxial Cable; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| GS880Z18AT-225 | 1 MEGABIT 3.3 VOLT SERIAL CONFIGURATION - NOT RECOMMENDED for NEW DESIGN |
| GS880Z18AT-225I | 9Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS880Z36AT-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z36AT-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z36AT-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS880Z36BGT-150 | 制造商:GSI Technology 功能描述:9MB SYNCH BURST SRAM 256K X 36 880 |
| GS880Z36BGT-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:9Mb Pipelined and Flow Through Synchronous NBT SRAM |
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