參數(shù)資料
型號(hào)： GS8662S08E-167I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 72Mb Burst of 2 DDR SigmaSIO-II SRAM
中文描述： 8M X 8 DDR SRAM, 0.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165
文件頁(yè)數(shù)： 31/37頁(yè)
文件大小： 960K
代理商： GS8662S08E-167I
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
1
RFU
011
Do not use this instruction; Reserved for Future Use.
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
RFU
101
Do not use this instruction; Reserved for Future Use.
1
RFU
110
Do not use this instruction; Reserved for Future Use.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1.
2.
Instruction codes expressed in binary, MSB on left, LSB on right.
Default instruction automatically loaded at power-up and in test-logic-reset state.
Preliminary
GS8662S08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
31/37
2005, GSI Technology
JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Power Supply Voltage
V
DDQ
1.7
1.8
1.9
V
Input High Voltage
V
IH
1.3
—
V
DD
+ 0.3
V
Input Low Voltage
V
IL
–
0.3
—
0.5
V
Output High Voltage (I
OH
= –2 mA)
V
OH
1.4
—
V
DD
V
Output Low Voltage (I
OL
= 2 mA)
V
OL
V
SS
—
0.4
V
Note:
The input level of SRAM pin is to follow the SRAM DC specification.
相關(guān)PDF資料
PDF描述
GS8662S08E-200 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-200I 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-250 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-250I 72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-300 72Mb Burst of 2 DDR SigmaSIO-II SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8662S08E-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
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