參數(shù)資料
型號: GS864018GT-167V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 8 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數(shù): 8/23頁
文件大?。?/td> 603K
代理商: GS864018GT-167V
GS864018/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
8/23
2004, GSI Technology
Byte Write Truth Table
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
Notes:
1.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2.
Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
3.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4.
Bytes “
C
” and “
D
” are only available on the x32 and x36 versions.
L
X
X
X
X
X
相關(guān)PDF資料
PDF描述
GS864018GT-200IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-200V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-250IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-250V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864018GT-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 3.3V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays
GS864018GT-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays
GS864018GT-200IV 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays
GS864018GT-200V 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays
GS864018GT-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 3.3V 72MBIT 4MX18 6.5NS/2.5NS 100TQFP - Trays