參數(shù)資料
型號: GS864018GT-167V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 8 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數(shù): 11/23頁
文件大?。?/td> 603K
代理商: GS864018GT-167V
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
GS864018/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
11/23
2004, GSI Technology
Simplified State Diagram with G
相關(guān)PDF資料
PDF描述
GS864018GT-200IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-200V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-250IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018GT-250V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864018T-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864018GT-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 3.3V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays
GS864018GT-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays
GS864018GT-200IV 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays
GS864018GT-200V 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V/2.5V 72MBIT 4MX18 7.5NS/3NS 100TQFP - Trays
GS864018GT-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 3.3V 72MBIT 4MX18 6.5NS/2.5NS 100TQFP - Trays