參數(shù)資料
型號: GS832436B-225
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 1M X 36 CACHE SRAM, 6 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件頁數(shù): 27/46頁
文件大?。?/td> 1149K
代理商: GS832436B-225
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
27/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Flow Through Read-Write Cycle Timing
CK
ADSP
ADV
GW
BW
G
Q1
A
D1
A
Q2
A
Q2
B
Q2c
Q2
D
Single Read
Burst Read
tOE
tOHZ
tS tH
tS
tH
tH
tS tH
tS
tH
tKH
DQ
A
–DQ
D
B
A
–B
D
tKL
tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ
tS
tH
Hi-Z
Q2
A
Burst wrap around to it’s initial state
WR1
E
1
tS
E
1
masks ADSP
tH
RD1
WR1
RD2
tS tH
A
0
–An
ADSC
tS tH
ADSC initiated read
相關(guān)PDF資料
PDF描述
GS832436B-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436B-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436C-133 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-166 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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