參數(shù)資料
型號(hào): GS832418C-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 7.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁(yè)數(shù): 41/46頁(yè)
文件大?。?/td> 1149K
代理商: GS832418C-200
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
41/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
209 BGA Package Drawing
14 mm x 22 mm Body, 1.0 mm Bump Pitch, 11 x 19 Bump Array
Symbol
Min
Typ
Max
Units
A
1.70
mm
A1
0.40
0.50
0.60
mm
b
0.50
0.60
0.70
mm
c
0.31
0.36
0.38
mm
D
21.9
22.0
22.1
mm
D1
18.0 (BSC)
mm
E
13.9
14.0
14.1
mm
E1
10.0 (BSC)
mm
e
1.00 (BSC)
mm
aaa
0.15
mm
Rev 1.0
A
A1
C
b
e
e
E
E
D1
D
aaa
Bottom View
Side View
相關(guān)PDF資料
PDF描述
GS832418C-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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