參數(shù)資料
型號: GS832418C-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 7.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 40/46頁
文件大?。?/td> 1149K
代理商: GS832418C-200
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
40/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Notes
:
1.
Depending on the package, some input pads of the scan chain may not be connected to any external pin. In such case: LBO = 1, ZQ = 1,
PE = 0, SD = 0, ZZ = 0, FT = 1, DP = 1, and SCD = 1.
Every DQ pad consists of two scan registers—D is for input capture, and Q is for output capture.
A single register (#194) for controlling tristate of all the DQ pins is at the end of the scan chain (i.e., the last bit shifted in this tristate control
is effective after JTAG EXTEST instruction is executed.
1 = no connect, internally set to logic value 1
0 = no connect, internally set to logic value 0
X = no connect, value is undefined
2.
3.
4.
5.
6.
GS832418/36/72 Boundary Scan Chain Order
Order
x72
x36
x18
Bump
x72
x36
x18
1(TBD)
相關PDF資料
PDF描述
GS832418C-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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