參數(shù)資料
型號: GS832418C-166I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 8.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 39/46頁
文件大?。?/td> 1149K
代理商: GS832418C-166I
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
39/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
JTAG Port Timing Diagram
JTAG Port AC Electrical Characteristics
Parameter
TCK Cycle Time
TCK Low to TDO Valid
TCK High Pulse Width
TCK Low Pulse Width
TDI & TMS Set Up Time
TDI & TMS Hold Time
Symbol
tTKC
tTKQ
tTKH
tTKL
tTS
tTH
Min
50
20
20
10
10
Max
20
Unit
ns
ns
ns
ns
ns
ns
tTKQ
tTS
tTH
tTKH
tTKL
TCK
TMS
TDI
TDO
tTKC
相關(guān)PDF資料
PDF描述
GS832418C-200 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418C-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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