參數(shù)資料
型號: GS832418B-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 7.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件頁數(shù): 12/46頁
文件大?。?/td> 1149K
代理商: GS832418B-200
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Inputs
TDO
TDI
TDO
TDI
18 I/Os
Die A
x18
16Mb
Die B
x18
16Mb
GS832418 Die Layout
Inputs
TDO
TDI
TDO
TDI
18 I/Os
18 I/Os
Die A
x18
16Mb
Die B
x18
16Mb
GS832436 Die Layout
Inputs
TDO
TDI
TDO
TDI
36 I/Os
36 I/Os
Die A
x36
32Mb
Die B
x36
32Mb
GS832472 Die Layout
相關PDF資料
PDF描述
GS832418B-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-225 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-225I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-250 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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