參數(shù)資料
型號(hào)： GS8322Z18B-V
廠商： GSI TECHNOLOGY
英文描述： 36Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述： 流水線和流量分配36MB通過同步唑的SRAM
文件頁數(shù)： 17/39頁
文件大?。?/td> 973K
代理商： GS8322Z18B-V
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
GS8322Z18/36/72(B/E/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
17/39
2002, GSI Technology
Burst Counter Sequences
BPR 1999.05.18
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after 2 cycles of wake up time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I
SB
2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, I
SB
2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
tZZR
tZZH
tZZS
tKL
tKH
tKC
CK
ZZ
Designing for Compatibility
The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal. Not
all vendors offer this option, however most mark the pin V
DD
or V
DDQ
on pipelined parts and V
SS
on flow through parts. GSI NBT
SRAMs are fully compatible with these sockets. Other vendors mark the pin as a No Connect (NC). GSI RAMs have an internal
pull-up device on the FT pin so a floating FT pin will result in pipelined operation. If the part being replaced is a pipelined mode
part, the GSI RAM is fully compatible with these sockets. In the unlikely event the part being replaced is a Flow Through device,
the pin will need to be pulled low for correct operation.
相關(guān)PDF資料
PDF描述
GS8322Z18E-133IV 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18E-133V 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18E-150IV 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18E-150V 36Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8322Z18E-166IV 36Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8322Z18E-133 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 36MBIT 2MX18 8.5NS/4NS 165FBGA - Trays
GS8322Z18E-133I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 36MBIT 2MX18 8.5NS/4NS 165FBGA - Trays
GS8322Z18E-133IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 36MBIT 2MX18 8.5NS/4NS 165FPBGA - Trays
GS8322Z18E-133V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 36MBIT 2MX18 8.5NS/4NS 165FPBGA - Trays
GS8322Z18E-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 36MBIT 2MX18 8.5NS/3.8NS 165FBGA - Trays
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