參數(shù)資料
型號: GS832272C-166
廠商: Electronic Theatre Controls, Inc.
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 200萬× 18,100萬× 36,為512k × 72分配36MB的S /雙氰胺同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁數(shù): 20/41頁
文件大?。?/td> 1223K
代理商: GS832272C-166
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
20/41
2001, GSI Technology
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
2 uA
2 uA
ZZ Input Current
I
IN1
V
DD
V
IN
V
IH
0 V
V
IN
V
IH
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
Output Disable, V
OUT
= 0 to V
DD
Output Disable, V
OUT
= 0 to V
DD
I
OH
=
8 mA, V
DDQ
= 2.375 V
I
OH
=
8 mA, V
DDQ
= 3.135 V
I
OL
= 8 mA
1 uA
1 uA
1 uA
100 uA
FT, SCD, ZQ Input Current
I
IN2
100 uA
1 uA
1 uA
1 uA
Output Leakage Current (x36/x72)
I
OL
I
OL
V
OH2
V
OH3
V
OL
1 uA
1 uA
Output Leakage Current (x18)
1 uA
1 uA
Output High Voltage
1.7 V
Output High Voltage
2.4 V
Output Low Voltage
0.4 V
相關(guān)PDF資料
PDF描述
GS832272C-166I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832218B-166I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832218B-200 512K 3.3 VOLT SERIAL CONFIGURATION PROM
GS832218B-200I 512K 3.3 VOLT SERIAL CONFIGURATION PROM
GS832218B-225 512K 3.3 VOLT SERIAL CONFIGURATION PROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS832272C-166I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 36MBIT 512KX72 8NS/3.5NS 209FBGA - Trays
GS832272C-166IV 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 36MBIT 512KX72 8NS/3.5NS 209BGA - Trays
GS832272C-166V 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 36MBIT 512KX72 8NS/3.5NS 209BGA - Trays
GS832272C-200 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 36MBIT 512KX72 7.5NS/3NS 209FBGA - Trays
GS832272C-225 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 36MBIT 512KX72 7NS/3NS 209FBGA - Trays