參數(shù)資料
型號: GS832218E-250I
廠商: Electronic Theatre Controls, Inc.
英文描述: 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述: 200萬× 18,100萬× 36,為512k × 72分配36MB的S /雙氰胺同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 15/41頁
文件大小: 1223K
代理商: GS832218E-250I
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
15/41
2001, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS832236 64K 3.3 VOLT SERIAL CONFIGURATION PROM
GS832236E 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832236E-200 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832236E-200I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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GS832236AB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk