參數(shù)資料
型號: GS8321Z36GE-250
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 36Mb Pipelined and Flow Through Synchronous NBT SRAMs
中文描述: 1M X 36 ZBT SRAM, 6.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù): 17/34頁
文件大小: 746K
代理商: GS8321Z36GE-250
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
ZZ Input Current
I
IN1
V
DD
V
IN
V
IH
0 V
V
IN
V
IH
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
Output Disable, V
OUT
= 0 to V
DD
I
OH
=
8 mA, V
DDQ
= 2.375 V
I
OH
=
8 mA, V
DDQ
= 3.135 V
I
OL
= 8 mA
1 uA
1 uA
1 uA
100 uA
FT Input Current
I
IN2
100 uA
1 uA
1 uA
1 uA
Output Leakage Current
I
OL
V
OH2
V
OH3
V
OL
1 uA
1 uA
Output High Voltage
1.7 V
Output High Voltage
2.4 V
Output Low Voltage
0.4 V
GS8321Z18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06b 2/2006
17/34
2003, GSI Technology
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