參數(shù)資料
型號: GS8321V3GE-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 200萬× 18,100萬× 32,100萬× 36同步突發(fā)靜態(tài)存儲器分配36MB
文件頁數(shù): 31/31頁
文件大小: 735K
代理商: GS8321V3GE-200
36Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
8321Vxx_r1
Creation of new datasheet
8321Vxx_r1; 8321Vxx_r1_01
Content
Added parity bit designators to x18 and x36 pinouts
Removed address pin numbers (except 0 and 1)
Corrected “E” package mechanical drawing thickness to 1.4
mm
Updated format
Added variation information to package mechanical
8321Vxx_r1_01;
8321Vxx_r1_02
Format/Content
8321Vxx_r1_02;
8321Vxx_r1_03
Content
Pb-free information added
GS8321V18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
31/31
2003, GSI Technology
相關(guān)PDF資料
PDF描述
GS8321V18E-133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18E-133I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18E-150 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18E-150I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18E-166 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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