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參數(shù)資料
| 型號： | GS8321V3E-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| 中文描述： | 200萬× 18，100萬× 32，100萬× 36同步突發(fā)靜態(tài)存儲器分配36MB |
| 文件頁數(shù)： | 12/31頁 |
| 文件大?。?/td> | 735K |
| 代理商： | GS8321V3E-200 |
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Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 3.6
V
–
0.5 to 3.6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
3.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
GS8321V18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
12/31
2003, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8321V3GE-200 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321V18E-133 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321V18E-133I | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321V18E-150 | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321V18E-150I | 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8321V3GE-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs |
| GS8321Z18AD-250 | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8321Z18AD-375 | 制造商:GSI Technology 功能描述:165 BGA - Bulk |
| GS8321Z18AGD-375I | 制造商:GSI Technology 功能描述:165 FPBGA - Bulk |
| GS8321Z18E | 制造商:GSI 制造商全稱:GSI Technology 功能描述:36Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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