參數(shù)資料
型號: GS8321V18GE-225
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 7 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-165
文件頁數(shù): 11/31頁
文件大?。?/td> 735K
代理商: GS8321V18GE-225
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
GS8321V18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
11/31
2003, GSI Technology
Simplified State Diagram with G
相關(guān)PDF資料
PDF描述
GS8321V18GE-225I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18GE-250 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18GE-250I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32E-133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32E-133I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8321V18GE-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18GE-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18GE-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32E-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V32E-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs