參數(shù)資料
型號(hào): GS8321EV36GE-250
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 1M X 36 CACHE SRAM, 6.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, BUMP, FPBGA-165
文件頁數(shù): 18/33頁
文件大?。?/td> 734K
代理商: GS8321EV36GE-250
GS8321EV18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
18/33
2003, GSI Technology
Pipeline Mode Timing (DCD)
Begin
Read A
Cont
Deselect Deselect Write B
Read C
Read C+1Read C+2Read C+3Cont
Deselect Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
Q(A)
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tS
tH
tS
tH
tS
tH
tS
tKC
tKL
tKH
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
A
B
C
Hi-Z
Deselected with E1
E2 and E3 only sampled with ADSC
ADSC initiated read
CK
ADSP
ADSC
ADV
Ao–An
GW
BW
Ba–Bd
E1
E2
E3
G
DQa–DQd
相關(guān)PDF資料
PDF描述
GS8321V18E 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18GE-150 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18GE-150I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18GE-166 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18GE-166I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8321V18E 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18E-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18E-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18E-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321V18E-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs