參數(shù)資料
型號(hào): GS8321EV18GE-225
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 2M X 18 CACHE SRAM, 7 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, BUMP, FPBGA-165
文件頁(yè)數(shù): 8/33頁(yè)
文件大?。?/td> 734K
代理商: GS8321EV18GE-225
GS8321EV18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
8/33
2003, GSI Technology
Byte Write Truth Table
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
Notes:
1.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2.
Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
3.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4.
Bytes “
C
” and “
D
” are only available on the x36 version.
L
X
X
X
X
X
相關(guān)PDF資料
PDF描述
GS8321EV36E-166I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV36E-200 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV36E-200I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV36E-225 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV36E-225I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8321EV18GE-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV18GE-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV18GE-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV32E-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV32E-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs