參數(shù)資料
型號(hào)： GS8321EV18GE-225
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述： 2M X 18 CACHE SRAM, 7 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, BUMP, FPBGA-165
文件頁(yè)數(shù)： 29/33頁(yè)
文件大?。?/td> 734K
代理商： GS8321EV18GE-225
GS8321EV18/32/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 4/2005
29/33
2003, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number
1
Type
Package
Speed
2
(MHz/ns)
T
A3
2M x 18
GS8321EV18E-250
DCD Pipeline/Flow Through
165 BGA (var. 1)
250/5.5
C
2M x 18
GS8321EV18E-225
DCD Pipeline/Flow Through
165 BGA (var. 1)
225/6
C
2M x 18
GS8321EV18E-200
DCD Pipeline/Flow Through
165 BGA (var. 1)
200/6.5
C
2M x 18
GS8321EV18E-166
DCD Pipeline/Flow Through
165 BGA (var. 1)
166/7
C
2M x 18
GS8321EV18E-150
DCD Pipeline/Flow Through
165 BGA (var. 1)
150/7.5
C
2M x 18
GS8321EV18E-133
DCD Pipeline/Flow Through
165 BGA (var. 1)
133/8.5
C
1M x 32
GS8321EV32E-250
DCD Pipeline/Flow Through
165 BGA (var. 1)
250/5.5
C
1M x 32
GS8321EV32E-225
DCD Pipeline/Flow Through
165 BGA (var. 1)
225/6
C
1M x 32
GS8321EV32E-200
DCD Pipeline/Flow Through
165 BGA (var. 1)
200/6.5
C
1M x 32
GS8321EV32E-166
DCD Pipeline/Flow Through
165 BGA (var. 1)
166/7
C
1M x 32
GS8321EV32E-150
DCD Pipeline/Flow Through
165 BGA (var. 1)
150/7.5
C
1M x 32
GS8321EV32E-133
DCD Pipeline/Flow Through
165 BGA (var. 1)
133/8.5
C
1M x 36
GS8321EV36E-250
DCD Pipeline/Flow Through
165 BGA (var. 1)
250/5.5
C
1M x 36
GS8321EV36E-225
DCD Pipeline/Flow Through
165 BGA (var. 1)
225/6
C
1M x 36
GS8321EV36E-200
DCD Pipeline/Flow Through
165 BGA (var. 1)
200/6.5
C
1M x 36
GS8321EV36E-166
DCD Pipeline/Flow Through
165 BGA (var. 1)
166/7
C
1M x 36
GS8321EV36E-150
DCD Pipeline/Flow Through
165 BGA (var. 1)
150/7.5
C
1M x 36
GS8321EV36E-133
DCD Pipeline/Flow Through
165 BGA (var. 1)
133/8.5
C
2M x 18
GS8321EV18E-250I
DCD Pipeline/Flow Through
165 BGA (var. 1)
250/5.5
I
2M x 18
GS8321EV18E-225I
DCD Pipeline/Flow Through
165 BGA (var. 1)
225/6
I
2M x 18
GS8321EV18E-200I
DCD Pipeline/Flow Through
165 BGA (var. 1)
200/6.5
I
2M x 18
GS8321EV18E-166I
DCD Pipeline/Flow Through
165 BGA (var. 1)
166/7
I
2M x 18
GS8321EV18E-150I
DCD Pipeline/Flow Through
165 BGA (var. 1)
150/7.5
I
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8321EV18E-166IT.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
3.
4.
相關(guān)PDF資料
PDF描述
GS8321EV36E-166I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV36E-200 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV36E-200I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV36E-225 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV36E-225I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8321EV18GE-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV18GE-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV18GE-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV32E-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8321EV32E-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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