參數(shù)資料
型號: GS832018
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 200萬× 18,100萬× 32,100萬× 36同步突發(fā)靜態(tài)存儲(chǔ)器分配36MB
文件頁數(shù): 7/25頁
文件大?。?/td> 669K
代理商: GS832018
GS832018/32/36T-250/225/200/166/150/133
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 10/2004
7/25
2003, GSI Technology
Mode Pin Functions
Note:
There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in
the default states as specified in the above tables.
Burst Counter Sequences
BPR 1999.05.18
Mode Name
Pin Name
State
L
H
L
H or NC
L or NC
Function
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
H
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相關(guān)PDF資料
PDF描述
GS832018GT-133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832018GT-133I 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832032GT-133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832032GT-133I Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:4700pF; Capacitance Tolerance:+/- 10%; Lead Pitch:7.5mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Series:184 RoHS Compliant: Yes
GS832032GT-150 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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