參數(shù)資料
型號: GS832018
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述: 200萬× 18,100萬× 32,100萬× 36同步突發(fā)靜態(tài)存儲器分配36MB
文件頁數(shù): 10/25頁
文件大?。?/td> 669K
代理商: GS832018
GS832018/32/36T-250/225/200/166/150/133
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 10/2004
10/25
2003, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS832018GT-133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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GS832032GT-133I Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:4700pF; Capacitance Tolerance:+/- 10%; Lead Pitch:7.5mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Series:184 RoHS Compliant: Yes
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