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參數(shù)資料
| 型號： | GS820E32T-6I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M Synchronous Burst SRAM |
| 中文描述： | 200萬同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 23/23頁 |
| 文件大?。?/td> | 345K |
| 代理商： | GS820E32T-6I |
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
23/23
1999, Giga Semconductor, Inc.
D
GS820E32T/Q-150/138/133/117/100/66
Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Revisions
GS
GS820E32
18/36
Rev 1.00 9/
1999A
Format
This was the first release of 2 Meg Burst Datasheets in the new format.
They included information for the Fine Pitch BGA package.
GS
GS820E32
18/36
Rev 1.00 9/
1999A; 1.01 11/1999B
Content
Took out the Fine Pitch BGA information.
GS
GS820E32
18/36
Rev 1.01
11/1999B; 1.02 1/2000C
Content
Ordering information. Changed 128K x 32 to 64K x 32; Typo
Ordering information. Changed “0” to go before “H” or “E” in part number.
Ordering information. Changed - 117 to -4, -100 to -5. and -66 to -6.
GS820E32
18/36
1.02 1/
2000C;820E32
18/36
1.03 2/
2000D
Format/Content
New GSI Logo
Switched TKQ with TCycle in Flow Through part of table on page 1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS820E32Q-100 | 2M Synchronous Burst SRAM |
| GS820E32Q-117 | 2M Synchronous Burst SRAM |
| GS820E32Q-133 | 2M Synchronous Burst SRAM |
| GS820E32Q-133I | 2M Synchronous Burst SRAM |
| GS820E32Q-138 | 2M Synchronous Burst SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS820H32A2T-138 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
| GS820H32AQ-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
| GS820H32AQ-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
| GS820H32AQ-138 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
| GS820H32AQ-138I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
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