參數(shù)資料
型號: GS820E32T-6I
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 2M Synchronous Burst SRAM
中文描述: 200萬同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 12/23頁
文件大小: 345K
代理商: GS820E32T-6I
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
12/23
1999, Giga Semconductor, Inc.
D
GS820E32T/Q-150/138/133/117/100/66
Operating Currents
Operating Currents
Parameter
Test Conditions
Symbol
-150
-138
-133
0 to 70°C
-40 to
85°C
0 to 70°C
-40 to
85°C
0 to 70°C
-40 to
85°C
Operating
Current
Device Selected;
All other inputs
V
IH
o
r
V
IL
Output
open
I
DD
Pipeline
I
DD
Flow-Thru
270mA
275mA
245mA
250mA
240mA
245mA
170mA
175mA
120mA
125mA
120mA
125mA
Standby
Current
ZZ
V
DD
- 0.2V
I
SB
Flow-Thru
10mA
15mA
10mA
15mA
10mA
15mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
I
DD
Pipeline
I
DD
Flow-Thru
90mA
95mA
80mA
85mA
80mA
85mA
45mA
50mA
40mA
45mA
40mA
45mA
Parameter
Test Conditions
Symbol
-117
-100
-66
0 to 70°C
-40 to
85°C
0 to 70°C
-40 to
85°C
0 to 70°C
-40 to
85°C
Operating
Current
Device Selected;
All other inputs
V
IH
o
r
V
IL
Output
open
I
DD
Pipeline
I
DD
Flow-Thru
210mA
215mA
180mA
185mA
150mA
155mA
120mA
125mA
120mA
125mA
95mA
100mA
Standby
Current
ZZ
V
DD
- 0.2V
I
SB
Flow-Thru
10mA
15mA
10mA
15mA
10mA
15mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
I
DD
Pipeline
I
DD
Flow-Thru
70mA
75mA
60mA
65mA
50mA
55mA
40mA
45mA
40mA
45mA
40mA
45mA
相關(guān)PDF資料
PDF描述
GS820E32Q-100 2M Synchronous Burst SRAM
GS820E32Q-117 2M Synchronous Burst SRAM
GS820E32Q-133 2M Synchronous Burst SRAM
GS820E32Q-133I 2M Synchronous Burst SRAM
GS820E32Q-138 2M Synchronous Burst SRAM
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