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參數(shù)資料
| 型號： | GS82032A |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 2Mb（64K x 32Bit) Synchronous Burst SRAM(2M位（64K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| 中文描述： | 2MB的（64K的x 32位）同步突發(fā)靜態(tài)存儲器（200萬位（64K的× 32位）同步靜態(tài)隨機存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 12/23頁 |
| 文件大?。?/td> | 757K |
| 代理商： | GS82032A |
Rev: 1.07 12/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/23
2000, Giga Semiconductor, Inc.
GS82032AT/Q-200/180/166/133/100
Operating Currents
Parameter
Test Conditions
Symbol
-200
-180
-166
-133
-100
Unit
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥
V
IH
o
r
≤
V
IL
Output
open
I
DD
Pipeline
I
DD
Flow
Through
I
SB
Flow
Through
I
DD
Pipeline
I
DD
Flow
Through
170
175
155
160
140
145
115
120
90
95
mA
100
105
100
105
90
95
80
85
65
70
mA
Standby
Current
ZZ
≥
V
DD
– 0.2 V
10
15
10
15
10
15
10
15
10
15
mA
Deselect
Current
Device Deselected;
All other inputs
≥
V
IH
or
≤
V
IL
35
40
35
40
30
35
30
35
25
30
mA
25
30
25
30
25
30
20
25
20
25
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS82032 | 2Mb（64K x 32Bit) Synchronous Burst SRAM(2M位（64K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS820E32A | 2Mb（64K x 32Bit) Synchronous Burst SRAM(2M位（64K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS820E32T-6I | 2M Synchronous Burst SRAM |
| GS820E32Q-100 | 2M Synchronous Burst SRAM |
| GS820E32Q-117 | 2M Synchronous Burst SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS82032AGQ-133 | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-133I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-150I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-166 | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
| GS82032AGQ-166I | 制造商:GSI Technology 功能描述:2MB (64K X 32) SYNCH BURST SCD - Trays |
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