參數(shù)資料
型號: GS8170DW36C-250
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 27/27頁
文件大?。?/td> 827K
代理商: GS8170DW36C-250
18Mb Sync
Σ
RAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
8170W18_r1
Creation of new datasheet
8170W18_r1;
8170W18_r1_01
Content
Removed all references to FT mode
8170W18_r1_01;
8170W18_r2
Content
Complete rewrite (DC from 36Mb)
8170W18_r2;
8170W18_r2_01
Content/format
Added 200 MHz speed bin
Updated format
8170W18_r2_01;
8170W18_r2_02
Content/format
Pervasive edit
Added x72 information to ordering information
8170Wxx_r2_02;
8170Wxx_r2_03
Content/format
Updated format
Removed Preliminary banner due to qualification
8170Wxx_r2_03;
8170Wxx_r2_04
Content
Added 1.5 V I/O information
GS8170DW36/72C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.04 5/2005
27/27
2002, GSI Technology, Inc.
相關(guān)PDF資料
PDF描述
GS8170DW36C-250I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36C-300 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36C-333 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36C-333I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW72C-200 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8170DW36C-250I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 18MBIT 512KX36 2.1NS 209FBGA - Trays
GS8170DW72AC-250 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 2.1NS 209FBGA - Trays
GS8170DW72AC-250I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 2.1NS 209FBGA - Trays
GS8170DW72AC-300I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 1.8NS 209FBGA - Trays
GS8170DW72AC-350I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V 18MBIT 256KX72 1.7NS 209FBGA - Trays