參數(shù)資料
型號: GS8162V72CGC-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 72 18Mb S/DCD Sync Burst SRAMs
中文描述: 256K X 72 CACHE SRAM, 5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, LEAD FREE, BGA-209
文件頁數(shù): 9/29頁
文件大?。?/td> 675K
代理商: GS8162V72CGC-300
GS8162V72CC-333/300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
9/29
2004, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS8162V72CGC-30I 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-333 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162V72CGC-333I 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS8162Z72CC 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8162Z72CC-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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