參數(shù)資料
型號: GS816272CC-150V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 72 18Mb S/DCD Sync Burst SRAMs
中文描述: 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 13/29頁
文件大小: 851K
代理商: GS816272CC-150V
GS816272CC-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02a 6/2006
13/29
2004, GSI Technology
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-250
-200
-150
Unit
0
to
70°C
40
to
85°C
0
to
°C
40
to
85°C
0
to
70°C
40
to
85°C
Operating
Current
Device Selected;
All other inputs
V
IH
o
r
V
IL
Output
open
(x72)
Pipeline
I
DD
I
DDQ
350
75
360
75
290
55
300
55
230
40
240
40
mA
Flow Through
I
DD
I
DDQ
265
50
275
50
230
45
240
45
210
40
220
40
mA
Standby
Current
ZZ
V
DD
– 0.2 V
Pipeline
I
SB
40
50
40
50
40
50
mA
Flow Through
I
SB
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
V
IH
or
V
IL
Pipeline
I
DD
85
90
85
90
85
90
mA
Flow Through
I
DD
60
65
50
55
50
55
mA
Notes:
1.
2.
I
DD
and I
DDQ
apply to any combination of V
DD
and V
DDQ
operation.
All parameters listed are worst case scenario.
相關(guān)PDF資料
PDF描述
GS816272CC-200IV 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CC-200V 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CC-250IV 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CC-250V 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CC-V 256K x 72 18Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816272CC-200 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 6.5NS/3NS 209FBGA - Trays
GS816272CC-200I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 6.5NS/3NS 209FBGA - Trays
GS816272CC-200IV 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 6.5NS/3NS 209FBGA - Trays
GS816272CC-200M 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays
GS816272CC-200V 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 6.5NS/3NS 209FBGA - Trays