參數(shù)資料
型號： GS816218B-250
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
中文描述： 1M X 18 CACHE SRAM, 5.5 ns, PBGA119
封裝： FBGA-119
文件頁數(shù)： 17/41頁
文件大?。?/td> 980K
代理商： GS816218B-250
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GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
17/41
1999, GSI Technology
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料
PDF描述
GS816218B-250I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-133 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-133I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-150 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-150I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
相關代理商/技術參數(shù)
參數(shù)描述
GS816218BB-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS816218BB-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FBGA - Trays
GS816218BB-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays
GS816218BB-150V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 119FPBGA - Trays
GS816218BB-200 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 1MX18 6.5NS/3NS 119FBGA - Trays
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