參數(shù)資料
型號(hào)： GS8161E36D-250I
廠商： Electronic Theatre Controls, Inc.
元件分類： DRAM
英文描述： 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述： 1M×18，512k×32，512k×36 18M位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁數(shù)： 15/36頁
文件大?。?/td> 939K
代理商： GS8161E36D-250I
GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.15 11/2004
15/36
1998, GSI Technology
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I
SB
2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a high state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, I
SB
2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
Designing for Compatibility
The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipelinemode via the FT signal found
on Pin 14. Not all vendors offer this option, however most mark Pin 14 as V
DD
or V
DDQ
on pipelined parts and V
SS
on flow
through parts. GSI NBT SRAMs are fully compatible with these sockets.
tZZR
tZZH
tZZS
tKL
tKH
tKC
CK
ZZ
相關(guān)PDF資料
PDF描述
GS8161E36T-150I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36T-166 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36T-166I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36T-200I 14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TSSOP 0 to 70
GS8161E36T-225 14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TVSOP 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E36DD-150 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161E36DD-150I 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161E36DD-150IV 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161E36DD-150V 制造商:GSI Technology 功能描述:165 BGA - Bulk
GS8161E36DD-200 制造商:GSI Technology 功能描述:165 BGA - Bulk
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