參數(shù)資料
型號: GS8161E18BGT-150I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M X 18 CACHE SRAM, 7.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數(shù): 35/35頁
文件大小: 766K
代理商: GS8161E18BGT-150I
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
8161ExxB_r1
Creation of new datasheet
8161ExxB_r1;
8161ExxB_r1_01
Content
Updated overshoot/undershoot information
8161ExxB_r1_01;
8161ExxB_r1_02
Content
Added 300 MHz speed bin
Added Pb-Free information for 165 BGA
Corrected block diagram (added E2 & E3 references)
Corrected truth table (added E2 & E3 references)
Removed 300 MHz speed bin
Changed Pb-Free to RoHS-compliant
Added Status column to Ordering Information table
8161ExxB_r1_02;
8161ExxB_r1_03
Content
GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 9/2005
35/35
2004, GSI Technology
相關(guān)PDF資料
PDF描述
GS8161E18BGT-200 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-250 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-250I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BT 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161E18BGT-150IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-150V 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E18BGT-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs