參數(shù)資料
型號: GS8160F36
廠商: GSI TECHNOLOGY
英文描述: 16Mb(256K x 72Bit)Sync Burst SRAM(16M位(256K x 72位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 16Mb的(256 × 72Bit)同步突發(fā)靜態(tài)存儲器(1,600位(256 × 72位)同步靜態(tài)隨機(jī)存儲器(帶2位脈沖地址計(jì)數(shù)器))
文件頁數(shù): 12/23頁
文件大?。?/td> 457K
代理商: GS8160F36
Rev: 2.06 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/23
1999, Giga Semiconductor, Inc.
Preliminary
GS8160F18/32/36T-7/8/8.5/10/11
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
°
C/W
°
C/W
°
C/W
Notes
Junction to Ambient (at 200 lfm)
single
40
1,2
Junction to Ambient (at 200 lfm)
four
24
1,2
Junction to Case (TOP)
9
3
20% tKC
V
SS
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
相關(guān)PDF資料
PDF描述
GS8160Z18 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18T-133 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18T-133I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18T-150 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8160Z18T-150I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8160F36BGT-5.5 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36BGT-5.5I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36BGT-5.5IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36BGT-5.5V 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36BGT-6.5 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 6.5NS 100TQFP - Trays