參數(shù)資料
型號(hào): GS8160E18
廠商: GSI TECHNOLOGY
英文描述: 16Mb(1M x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 16Mb的(100萬(wàn)x 18位)同步突發(fā)靜態(tài)存儲(chǔ)器(1,600位(100萬(wàn)× 18位)同步靜態(tài)隨機(jī)存儲(chǔ)器(帶2位脈沖地址計(jì)數(shù)器))
文件頁(yè)數(shù): 16/26頁(yè)
文件大?。?/td> 519K
代理商: GS8160E18
Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
16/26
1999, Giga Semiconductor, Inc.
Preliminary
GS8160E18/32/36T-225/200/180/166/150/133
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-225
-200
-180
-166
-150
-133
Unit
Min
4.4
1.5
Max
2.5
Min
5.0
1.5
Max
3.0
Min
5.5
1.5
Max
3.2
Min
6.0
1.5
Max
3.5
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Flow
Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
8.5
3.0
7.0
10.0
3.0
7.5
10.0
3.0
8.0
10.0
3.0
8.5
10.0
3.0
10.0
15.0
3.0
11.0
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock HIGH Time
Clock LOW Time
1.3
1.5
1.3
1.5
1.3
1.5
1.3
1.5
1.5
1.7
1.7
2
ns
ns
Clock to Output in High-Z
tHZ
1
tOE
1.5
2.5
1.5
3.0
1.5
3.2
1.5
3.5
1.5
3.8
1.5
4.0
ns
G to Output Valid
2.5
3.2
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
tS
tH
2.5
3.0
3.2
3.5
3.8
4.0
ns
Setup time
Hold time
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
ns
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
100
100
100
100
100
100
ns
相關(guān)PDF資料
PDF描述
GS8160E32 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS8160E36 16Mb(256K x 72Bit)Sync Burst SRAM(16M位(256K x 72位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS8160F18 16Mb(1M x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS8160F32 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS8160F36 16Mb(256K x 72Bit)Sync Burst SRAM(16M位(256K x 72位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8160E18BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 100TQFP - Trays