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參數(shù)資料
| 型號(hào)： | GS8160E18 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器)) |
| 中文描述： | 16Mb的（100萬x 18位）同步突發(fā)靜態(tài)存儲(chǔ)器（1,600位（100萬× 18位）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器）） |
| 文件頁(yè)數(shù)： | 12/26頁(yè) |
| 文件大?。?/td> | 519K |
| 代理商： | GS8160E18 |
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Rev: 2.07 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/26
1999, Giga Semiconductor, Inc.
Preliminary
GS8160E18/32/36T-225/200/180/166/150/133
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to
Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of
time, may affect reliability of this component.
Note:
1.
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
–
0.5 to 3.6
V
–
0.5 to 3.6
V
Voltage on Clock Input Pin
–
0.5 to 6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
V
Voltage on Other Input Pins
–
0.5 to 3.6
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
2.375
2.5
2.7
V
I/O Supply Voltage
V
DDQ
2.375
2.5
3.6
V
Input High Voltage
V
IH
0.7 * V
DD
—
3.6
V
1
Input Low Voltage
V
IL
–
0.3
—
0.3 * VDD
V
1
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
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| GS8160E36 | 16Mb（256K x 72Bit）Sync Burst SRAM(16M位（256K x 72位）同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8160E18BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-150V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-200 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 6.5NS/3NS 100TQFP - Trays |
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