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參數(shù)資料
| 型號： | GS816036T-225I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70 |
| 中文描述： | 100萬× 18，512k × 32的，為512k × 36 35.7同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 12/28頁 |
| 文件大?。?/td> | 810K |
| 代理商： | GS816036T-225I |
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Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
12/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Condi-
tions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.
Symbol
Description
Value
Unit
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Voltage on Clock Input Pin
–
0.5 to 4.6
V
–
0.5 to 4.6
V
–
0.5 to 6
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
+/
–
20
V
Voltage on Other Input Pins
V
Input Current on Any Pin
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
Temperature Under Bias
–
55 to 125
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816036T-250 | Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 |
| GS816036T-250I | Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70 |
| GS8160E18 | 16Mb（1M x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
| GS8160E32 | 16Mb（512K x 36Bit）Sync Burst SRAM(16M位（512K x 36位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
| GS8160E36 | 16Mb（256K x 72Bit）Sync Burst SRAM(16M位（256K x 72位）同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816036T-250 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8160E18BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
| GS8160E18BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays |
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