參數(shù)資料
型號(hào)： GS816032T-225I
廠(chǎng)商： Electronic Theatre Controls, Inc.
元件分類(lèi)： DRAM
英文描述： 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述： 1M×18，512k×32，512k×36 18M位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 27/28頁(yè)
文件大小： 810K
代理商： GS816032T-225I
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
27/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
18Mb Sync SRAM Datasheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS816018T-150IT 1.00 9/
1999A;GS816018T-150IT
2.00 1/1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process.
Master File Rev B
Added x72 Pinout.
Added GSI Logo.
Changed Flow-Through Read-Write cycle Timing Diagram for
accuracy
GS816018T- 2.00 11/
1999B;GS816018T 2.01 1/
2000C
Format
GS816018T 2.01 1/
2000C;GS816018 T 2.02 1/
2000D
Changed pin description in TQFP to match order of pins in
pinout.
GS18/362.0 1/2000DGS18/
362.03 2/2000E
Front page; Features - changed 2.5V I/O supply to 2.5V
or3.3V I/O supply; Core and Interface voltages - Changed
paragraph to include information for 3.3V;Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -
.05 to VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply
Voltage- Max. from VDD to 3.6; Input High Voltage- Max. from
VDD +0.3 to 3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage
line to table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
Input High Voltage (p. 11) changed to 0.7* V
DD
Input Low Voltage (p.11) changed to 0.3* V
DD
Changed the value of ZZ recovery in the AC Electrical
Characteristics table on page 15 from 20 ns to 100 ns
GS18/362.03 2/2000E;
816018_r2_04
Content
816018_r2_04;
816018_r2_05
Content
816018_r2_05;
816018_r2_06
Content/Format
Added 225 MHz speed bin
Updated Pg. 1 table, AC Characteristics table, and Operating
Currents table to match 815xxx
Updated format to comply with Technical Publications
standards
Updated Capitance table—removed Input row and changed
Output row to I/O
816018_r2_06;
816018_r2_07
Content
816018_r2_07;
816018_r2_08
Content
Updated Features list on page 1
Completely reworked table on page 1
Updated Mode Pin Functions tableon page 7
Added 3.3 V references to entire document
Updated Operating Conditions table
Added Pin 56 to Pin Description table
Updated Operating Currents table and added note
Updated Application Tips paragraph
Updated table on page 1; added power numbers
816018_r2_08;
816018_r2_09
Content
相關(guān)PDF資料
PDF描述
GS816032T-250 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-250I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk
GS816018 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816018T-133I Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 10x16 mm; Packaging: Bulk
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816032T-250 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-250I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS816036BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
GS816036BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX36 7.5NS/3.8NS 100TQFP - Trays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*