參數(shù)資料
型號: GS816032
廠商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
中文描述: 16Mb的(為512k × 36Bit)同步突發(fā)靜態(tài)存儲器(1,600位(為512k × 36位)同步靜態(tài)隨機(jī)存儲器(帶2位脈沖地址計數(shù)器))
文件頁數(shù): 11/26頁
文件大?。?/td> 518K
代理商: GS816032
Rev: 2.08 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
11/26
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-225/200/180/166/150/133
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS816036 16Mb(256K x 72Bit)Sync Burst SRAM(16M位(256K x 72位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS816036T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-133I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-150I 1.0A Surface Mount Schottky Barrier Rectifier, 30V, Single, SMB
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